CHARGE-TRANSPORT IN HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS

被引：87

作者：

WERNER, M

DORSCH, O

BAERWIND, HU

OBERMEIER, E

HAASE, L

SEIFERT, W

RINGHANDT, A

JOHNSTON, C

ROMANI, S

BISHOP, H

CHALKER, PR

机构：

[1] TECH UNIV BERLIN,D-10623 BERLIN,GERMANY

[2] AEA TECHNOL,DIDCOT OX11 0RA,OXON,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent conductivity and Hall measurements have been carried out on heavily in situ B-doped polycrystalline diamond films in a temperature range from similar to 100 to 750 K. The slope of the conductivity is clearly non-Arrhenius leading to a pronounced tail at low temperatures. Carrier transport at low temperatures is dominated by variable range hopping. The activation energy decreases with increasing doping concentration and the most heavily doped diamond films show metallic behavior above room temperature. Hole carrier concentrations up to 1.8X10(21) cm(-3) were measured in agreement with secondary-ion-mass spectroscopy investigations.

引用

页码：595 / 597

页数：3

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