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- [21] RECOMBINATION EFFICIENCY OF RADIATION DEFECTS IN SILICON FORMED BY NEUTRON AND ELECTRON-BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1082 - 1083
- [22] SUBTHRESHOLD DEFECT FORMATION AS A RESULT OF ELECTRON-BOMBARDMENT OF SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 960 - 962
- [23] RATE OF FORMATION OF A-CENTERS IN SILICON SUBJECTED TO PULSED ELECTRON-BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 101 - 102
- [24] EFFECT OF STRUCTURE OF PHOSPHATE GLASSES ON CHARGE STORAGE AT ELECTRON-BOMBARDMENT IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (04): : 112 - 113
- [25] INFLUENCE OF FERMI ENERGY ON EFFICIENCY OF GENERATION OF RADIATION DEFECTS BY ELECTRON-BOMBARDMENT OF SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 763 - 766
- [29] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242
- [30] OXIDATION UNDER ELECTRON-BOMBARDMENT - A TOOL FOR STUDYING THE INITIAL STATES OF SILICON OXIDATION PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (06): : 721 - 733