HIGH-GAIN GAAS-MESFET OP AMP

被引：0

作者：

XIAO, S ^{[1
]}

SALAMA, CAT ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 1994年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF01272650

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A gain enhancement technique for GaAs MESFET op amps is presented. It uses positive feedback to cancel the output conductance between the driver and active load transistors in a common-source amplifier configuration. An op amp using this technique was implemented in a 1-mum non-self-aligned GaAs MESFET process. The op amp exhibited a dc gain of 60 dB and a unity-gain frequency of 840 MHz.

引用

页码：169 / 173

页数：5

共 8 条

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