共 50 条
- [41] Mechanism of p-n junction breakdown at high reverse voltage rampsTECHNICAL PHYSICS LETTERS, 2005, 31 (12) : 1043 - 1046Kyuregyan, AS
- [42] PROBING THE SPACE-CHARGE LAYER IN A P-N JUNCTIONPHYSICAL REVIEW, 1952, 86 (04): : 647 - 647PEARSON, GLREAD, WTSHOCKLEY, W
- [43] PROBLEM OF ADMITTANCE OF A P-N JUNCTION UNDER AVALANCHE BREAKDOWN CONDITIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1151 - +BERMAN, LS
- [44] Mechanism of p-n junction breakdown at high reverse voltage rampsTechnical Physics Letters, 2005, 31 : 1043 - 1046A. S. Kyuregyan
- [45] SOME ASPECTS OF P-N JUNCTION SECOND-BREAKDOWN MODEPROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (11): : 1860 - &MARS, P
- [46] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1.JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 835 - 848KIKUCHI, MTACHIKAWA, K
- [47] STUDY ON ANNEALING OF RADIATION INDUCED 1-F NOISE IN GE P-N JUNCTIONJOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (09) : 1062 - 1062KOMASTUBARA, KHASHIMOTO, U
- [48] INHOMOGENEITY OF SURFACE CHARGE AND SURFACE BREAKDOWN IN SILICON P-N JUNCTIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 462 - &LITVINOV, ROSADOVNIC.AA
- [50] Low Breakdown Voltage CMOS Compatible p-n Junction Avalanche Photodiode2014 IEEE PHOTONICS CONFERENCE (IPC), 2014, : 170 - 171Hossain, Md. MottalebZarkesh-Ha, PaymanDavid, John P. R.Hayat, Majeed M.