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- [1] Simulation of the Premature Breakdown of the Planar p-n Junction at the Avalanch Multiplication of Carriers in SiliconEDM: 2009 10TH INTERNATIONAL CONFERENCE AND SEMINAR ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2009, : 12 - +Tishkovsky, Eugene G.Obodnicov, Vladimir I.Zabagonsky, Yaroslav V.
- [3] Light and heavy charge carrier caused breakdown of silicon p-n junctionCAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 1996, : 353 - 356Puritus, T
- [4] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONSSOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157MOLL, JLVANOVERSTRAETEN, R
- [5] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONSJOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3945 - &LOGAN, RAWHITE, HG
- [6] Avalanche multiplication coefficients of carriers in p-n structuresSEMICONDUCTORS, 1996, 30 (06) : 558 - 563Kholodnov, VA
- [7] AVALANCHE MULTIPLICATION IN GE AND GAAS P-N JUNCTIONSJOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 434 - &LOGAN, RASZE, SM
- [8] Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave fieldSEMICONDUCTORS, 2011, 45 (03) : 288 - 291Dadamirzayev, M. G.
- [9] Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave fieldSemiconductors, 2011, 45 : 288 - 291M. G. Dadamirzayev
- [10] Dynamics of charge transfer at p-n junctionABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2012, 244Mikhailov, IvanChen, JiangchaoSchmitz, AndrewKilin, Dmitri