GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-X-YALYP

被引：9

作者：

HAFICH, MJ ^{[1
]}

LEE, HY ^{[1
]}

CRUMBAKER, TE ^{[1
]}

VOGT, TJ ^{[1
]}

SILVESTRE, P ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InxGa1-x-yAlyP, with y = 0.0 to y = 0.52, has been grown lattice matched to GaAs substrates using the technique of gas-source molecular-beam epitaxy. Growth conditions were established that resulted in conducting quaternary layers for both n-type Si doped and p-type Be doped samples. Si doped quaternary layers had a significantly reduced electron concentration at room temperature that varied with the AlP content in the InGaAlP layer. Intentionally doped InGaAlP layers exhibited room temperature photoluminescence for AlP mole fractions up to y = 0.37; photoluminescence peak energies were 1.9 eV when y = 0.0 (InGaP) to 2.3 eV when y = 0.37 and decreased in intensity for increasing y.

引用

页码：969 / 971

页数：3

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