SPATIAL-DISTRIBUTION OF DEFECTS IN HIGH-PURITY SILICA GLASSES

被引:15
作者
TOHMON, R
IKEDA, A
SHIMOGAICHI, Y
MUNEKUNI, S
OHKI, Y
NAGASAWA, K
HAMA, Y
机构
[1] SAGAMI INST TECHNOL,DEPT ELECT ENGN,FUJISAWA,KANAGAWA 251,JAPAN
[2] WASEDA UNIV,SCI & ENGN RES LAB,SHINJUKU KU,TOKYO 169,JAPAN
关键词
D O I
10.1063/1.345681
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spatial distribution of defects and impurities in a variety of high-purity silica glass manufactured by different methods are studied. The defects investigated include those found in the as-manufactured glass (oxygen vacancy and peroxy linkage), as well as those induced by ionizing radiation or ultraviolet light (E' center and oxygen hole centers). A significant difference is observed in the distribution between silica manufactured by different methods. Furthermore, the defects induced by ionizing radiation or ultraviolet light have a spatial distribution relative to the geometry of the as-manufactured boule, suggesting that these defects arise primarily from the activation of preexisting precursors.
引用
收藏
页码:1302 / 1306
页数:5
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