BOND-ANGLE RELAXATION AND ELECTRONIC-STRUCTURE OF SI AND GE OVERLAYERS ON (110) SURFACES OF III-V SEMICONDUCTORS

被引：7
作者：
KALLA, R
POLLMANN, J
机构：
来源：
SURFACE SCIENCE | 1988年 / 200卷 / 01期
关键词：
D O I：
10.1016/0039-6028(88)90434-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：80 / 100
页数：21
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