THERMALLY INDUCED IN/GA INTERDIFFUSION IN INXGA1-XAS/GAAS STRAINED SINGLE QUANTUM WELL GROWN BY LPMOVPE

被引：18
作者：
IIKAWA, F
MOTISUKE, P
BRUM, JA
SACILOTTI, MA
ROTH, AP
MASUT, RA
机构：
[1] CPQD,TELEBRAS,BR-13100 CAMPINAS,SP,BRAZIL
[2] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
[3] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(88)90549-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Semiconducting Gallium Arsenide
引用
收藏
页码：336 / 341
页数：6
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