NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION

被引：29

作者：

HSIEH, CM

MAHER, DM

机构：

[1] BELL LABS,READING,PA 19604

[2] BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1302 / 1306

页数：5

共 16 条

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[2] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN [J].

BOOKER, GR ;

STRICKLE.R .

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[3] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J].

DRUM, CM ;

VANGELDE.W .

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[4]

DRUM CM, 1970, FALL EL SOC M

[5]

FISHER WA, 1966, J ELECTROCHEM SOC, V113, P1054

[6]

HIRTH JP, 1968, THEORY DISLOCATIONS, P484

[7]

HSIEH C, UNPUBLISHED

[8] EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN [J].

JACCODINE, RJ ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1966, 8 (01) :29-+

[9] STACKING FAULTS IN ANNEALED SILICON SURFACES [J].

LAWRENCE, JE .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :360-&

[10]

MAYER A, 1970, RCA REV, V31, P414

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