MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS

被引：87

作者：

LUDEKE, R ^{[1
]}

CHANG, LL ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.1654858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：201 / 203

页数：3

共 7 条

[1] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J].

CHANG, LL ;

ESAKI, L ;

HOWARD, WE ;

LUDEKE, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :11-16

CHO, AY .

[3] CUBIC PHASE IN VAPOR-DEPOSITED CDS FILMS [J].

ESCOFFERY, CA .

[4]

GALLI G, 1968, ELECTROCHEM TECHNOL, V6, P358

JONA, F .

[6]

STEVENSON GA, 1971, J MATER SCI, V6, P413, DOI 10.1007/BF02403061

[7] SUPERCONDUCTING PROPERTIES OF CRYSTALLINE ULTRATHIN FILMS [J].

STRONGIN, M ;

KAMMERER, OF ;

FARRELL, HH ;

MILLER, DL .