PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS

被引：22

作者：

BOIS, D ^{[1
]}

BOULOU, M ^{[1
]}

机构：

[1] LAB ELECTR & PHYS APPL,LIMEIL BREVANNES,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 22卷 / 02期

关键词：

D O I：

10.1002/pssa.2210220234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：671 / 675

页数：5

共 12 条

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PINARD, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (01) :85-&

[2]

BOIS D, TO BE PUBLISHED

[3] STRAPPING ANALYSIS IN GALLIUM ARSENIDE [J].

CARBALLES, JC ;

LEBAILLY, J .

SOLID STATE COMMUNICATIONS, 1968, 6 (03) :167-+

[4]

FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848

[5] TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) :13-+

[6] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) :503-+

[7]

GUTKIN AA, 1971, SOV PHYS SEMICOND+, V5, P1006

[8]

HUGUES FD, 1972, ACTA ELECTRONICA, V15, P43

[9]

KUKIMOTO H, TO BE PUBLISHED

[10] DIRECT OBSERVATION OF MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW-TEMPERATURE HIGH-FREQUENCY PHOTOCAPACITANCE [J].

SAH, CT ;

ROSIER, LL ;

FORBES, L .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :316-&

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