STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS

被引：225
作者：
CHRISTEL, LA
GIBBONS, JF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期
关键词：
D O I：
10.1063/1.329448
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5050 / 5055
页数：6
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