INTRA-BAND AND INTERBAND RAMAN-SCATTERING BY FREE-CARRIERS IN HEAVILY DOPED P-SI

被引：29

作者：

CHANDRASEKHAR, M ^{[1
]}

ROSSLER, U ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.22.761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：761 / 770

页数：10

共 25 条

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