INTRA-BAND AND INTERBAND RAMAN-SCATTERING BY FREE-CARRIERS IN HEAVILY DOPED P-SI

被引：29
作者：
CHANDRASEKHAR, M [1 ]
ROSSLER, U [1 ]
CARDONA, M [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
来源：
PHYSICAL REVIEW B | 1980年 / 22卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.22.761
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：761 / 770
页数：10
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