INFRARED-ABSORPTION OF HYDROGEN IN PROTON-IMPLANTED GAP

被引：14

作者：

SOBOTTA, H ^{[1
]}

RIEDE, V ^{[1
]}

ASCHERON, C ^{[1
]}

GEIST, V ^{[1
]}

OPPERMANN, D ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT CHEM,FACHBEREICH ANAT & ISTOL PATOL,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K77 / K80

页数：4

共 8 条

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[3]

GEIST V, RAD EFF

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PAUL, W .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :501-506

[6] CONTROLLED HYDROGENATION OF AMORPHOUS SILICON AT LOW-TEMPERATURES [J].

STEIN, HJ ;

PEERCY, PS .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :604-606

[7] BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON [J].

STEIN, HJ .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :159-174

[8] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].

TSAI, CC ;

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :29-42

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