PARAMAGNETIC CENTER IN POROUS SILICON - A DANGLING BOND WITH C3V SYMMETRY

被引：15

作者：

UCHIDA, Y ^{[1
]}

KOSHIDA, N ^{[1
]}

KOYAMA, H ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,DIV ELECTR & INFORMAT ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Paramagnetic centers in self-supporting porous Si films formed by anodization of Si(100) and (111) wafers have been studied by X-band electron paramagnetic resonance (EPR) at room temperature. The EPR spectra indicate that this center has C3v symmetry, and the angular dependence of the line position is described by a g tensor axially symmetric about a [111] axis; g(parallel-to) = 2.0024, g(perpendicular-to) = 2.0080 for the (100) film and g(parallel-to) = 2.0020, g(perpendicular-to) = 2.0088 for the (111) film. The small g shift along the [111] axis indicates that the center is assigned to be a dangling bond localized on a single silicon atom. The results indicate that the surface of as-anodized porous Si maintains a crystallinity of silicon.

引用

页码：961 / 963

页数：3

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