INVERSION-LAYERS IN SILICON ON INSULATING SUBSTRATES

被引：11
|
作者：
ENGLERT, T
LANDWEHR, G
PONTCHARRA, J
DORDA, G
机构：
[1] CEN GRENOBLE,ELECTR LAB,GRENOBLE,FRANCE
[2] CEN GRENOBLE,TECHNOL INFORMAT LAB,GRENOBLE,FRANCE
[3] SIEMENS AG,FORSCH LAB,MUNCHEN,FED REP GER
来源：
SURFACE SCIENCE | 1980年 / 98卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(80)90524-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：427 / 436
页数：10
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