PHOTOEMISSION-STUDY OF THE ELECTRONIC-STRUCTURE OF C-60 AND KXC-60

被引:77
作者
MERKEL, M [1 ]
KNUPFER, M [1 ]
GOLDEN, MS [1 ]
FINK, J [1 ]
SEEMANN, R [1 ]
JOHNSON, RL [1 ]
机构
[1] UNIV HAMBURG,INST EXPTL PHYS 2,W-2000 HAMBURG 50,GERMANY
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 17期
关键词
D O I
10.1103/PhysRevB.47.11470
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution photoemission studies have been performed on undoped and K-doped C60 films. In the undoped material, temperature-dependent measurements showed no significant change of the valence-band electronic structure on crossing the structural phase transitions at 90 K and 249 K. Studies of KxC60 conducted with a variety of photon energies and doping levels show that K3C60 is a metal, with a sharp Fermi edge situated at the maximum of the occupied part of the lowest unoccupied molecular orbital-or LUMO-derived bands. The density of states observed at the Fermi level shows a maximum at x = 3, indicating that there is no pseudogap at the Fermi level of K3C60. The spectral weight of the occupied LUMO-derived states with respect to those of the highest occupied molecular orbital (HOMO) is found to be photon-energy dependent. A surface K content greater than x = 6 can be achieved and is found to be correlated with the presence of a potassium oxide overlayer. The results are discussed with reference to the need for absolute, accurate determination of the surface K content of the samples studied by photoemission.
引用
收藏
页码:11470 / 11478
页数:9
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