COMPENSATING SURFACE-DEFECTS INDUCED BY SI DOPING OF GAAS

被引：140

作者：

PASHLEY, MD

HABERERN, KW

机构：

[1] Philips Laboratories, North American Philips Corporation, Briarcliff Manor

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.67.2697

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have made direct experimental observation of a new mechanism for Fermi-level pinning in Si-doped (001) GaAs. Scanning-tunneling-microscope images show that high levels of Si doping cause the GaAs(001)-(2 x 4) unit cells to reorder by the formation of kinks in the dimer vacancy rows. We are able to show that these kinks are surface acceptors, which form in the required numbers to exactly compensate the GaAs surface region. We find that in the depleted surface layer all the incorporated Si atoms are donors up to Si concentrations of at least 1 x 10(19) cm-3.

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页码：2697 / 2700

页数：4

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PASHLEY MD, IN PRESS