FORM EFFECT AND HOT-ELECTRON TRANSPORT

被引：0
|
作者：
BASS, FG
VAKSER, AI
机构：
[1] Institute of Radiophysics and Electronics, Academy of Sciences of the Ukrainian SSR, Kharkov, 310085 Ukrainian SSR
来源：
PHYSICS LETTERS A | 1991年 / 159卷 / 4-5期
关键词：
D O I：
10.1016/0375-9601(91)90526-E
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It is shown that in the case that the heat removal direction is perpendicular to that of the current, the geometrical form of one-temperature semiconductors may have a considerable effect on hot electron transport.
引用
收藏
页码：284 / 288
页数：5
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