BONDING BY ATOMIC REARRANGEMENT OF INP/INGAASP 1.5-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES

被引：132

作者：

LO, YH ^{[1
]}

BHAT, R ^{[1
]}

HWANG, DM ^{[1
]}

KOZA, MA ^{[1
]}

LEE, TP ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique, namely bonding by atomic rearrangement has been invented to realize high quality heteroepitaxy for lasers and optoelectronics. High performance lasers of 1.5-mu-m wavelength have been fabricated on GaAs substrates using this method. The laser has the same threshold current and quantum efficiency as lasers on InP substrates. No performance degradation has been observed. The transmission electron microscopic results show that the heteroepitaxy is excellent, without a single threading dislocation or stacking fault.

引用

页码：1961 / 1963

页数：3

共 9 条

[1] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].