CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：8
作者：
DUAN, XF
FUNG, KK
CHU, YM
SHENG, C
ZHOU, GL
机构：
[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[2] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 63卷 / 02期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1080/09500839108201963
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.
引用
收藏
页码：79 / 85
页数：7
相关论文
共 15 条
  • [1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
    ABSTREITER, G
    BRUGGER, H
    WOLF, T
    JORKE, H
    HERZOG, HJ
    [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
  • [2] ELECTRON-DIFFRACTION STUDIES OF STRAIN IN EPITAXIAL BICRYSTALS AND MULTILAYERS
    CHERNS, D
    KIELY, CJ
    PRESTON, AR
    [J]. ULTRAMICROSCOPY, 1988, 24 (04) : 355 - 370
  • [3] TETRAGONAL AND MONOCLINIC FORMS OF GEXSI1-X EPITAXIAL LAYERS
    EAGLESHAM, DJ
    MAHER, DM
    FRASER, HL
    HUMPHREYS, CJ
    BEAN, JC
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 222 - 224
  • [4] CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF STRAIN MODULATION IN GAAS/INGAAS SUPERLATTICES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    FUNG, KK
    YORK, PK
    FERNANDEZ, GE
    EADES, JA
    COLEMAN, JJ
    [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1988, 57 (04) : 221 - 227
  • [5] ELASTIC RELAXATION IN TRANSMISSION ELECTRON-MICROSCOPY OF STRAINED-LAYER SUPERLATTICES
    GIBSON, JM
    HULL, R
    BEAN, JC
    TREACY, MMJ
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 649 - 651
  • [6] HIRSCH PB, 1965, ELECTRON MICROSCOPY
  • [7] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES
    HULL, R
    BEAN, JC
    CERDEIRA, F
    FIORY, AT
    GIBSON, JM
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58
  • [8] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES
    LANG, DV
    PEOPLE, R
    BEAN, JC
    SERGENT, AM
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1333 - 1335
  • [9] DETECTION AND MEASUREMENT OF LOCAL DISTORTIONS IN A SEMICONDUCTOR LAYERED STRUCTURE BY CONVERGENT-BEAM ELECTRON-DIFFRACTION
    MAHER, DM
    FRASER, HL
    HUMPHREYS, CJ
    KNOELL, RV
    BEAN, JC
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 574 - 576
  • [10] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
12