OPTICAL PHONONS IN GAAS/ALAS QUANTUM WIRES

被引:32
作者
REN, SF [1 ]
CHANG, YC [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 14期
关键词
D O I
10.1103/PhysRevB.43.11857
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phonon-dispersion curves of semiconductor quantum wires are studied in a realistic rigid-ion model. We introduce an approach for solving the rigid-ion model in quantum wires, which avoids direct computation of the Coulomb interaction. Our calculations demonstrate the interesting anisotropic behavior of long-wavelength optical phonons in quantum wires. In particular, we show that frequencies of several optical phonons approach different values as the wave vector approaches the zone center from three different axes. We have also shown that the lateral confinement in a quantum wire on the interface modes leads to the edge modes.
引用
收藏
页码:11857 / 11863
页数:7
相关论文
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