NOVEL SEMICONDUCTOR SUBSTRATE FOR HIGH-SPEED INTEGRATED-CIRCUIT MANUFACTURE

被引：0
|
作者：
LI, JM
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 21期
关键词：
D O I：
10.1049/el:19890955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1431 / 1432
页数：2
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