NMR-STUDY ON ELECTRONIC STATES IN PHOSPHORUS DOPED SILICON

被引：43

作者：

KOBAYASHI, SI

FUKAGAWA, Y

IKEHATA, S

SASAKI, W

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1978年 / 45卷 / 04期

关键词：

D O I：

10.1143/JPSJ.45.1276

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1276 / 1281

页数：6

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