CARRIER COOLING IN INTERMIXED GAAS/ALGAAS QUANTUM DOTS AND WIRES USING HIGH-EXCITATION AND TRANSIENT SPECTROSCOPY

Buried low-dimensional integrated dot and wire structures fabricated by masked implantation enhanced intermixing are compared directly. Using high excitation and transient spectroscopy hot carrier effects as well as phase-space filling in the low-dimensional structures are observed. The carrier cooling curves of the wires and dots show a bend at about 350 ps which may be an indication of two dominant relaxation mechanisms. The influences of the carrier capture in low-dimensional systems and the relaxation on the carrier temperature are separated by measurements with different excitation wavelengths.