VERY-LOW THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED INGAASP SINGLE-QUANTUM-WELL LASERS

被引：8

作者：

YAMAMOTO, N

YOKOYAMA, K

YAMANAKA, T

YAMAMOTO, M

机构：

[1] NTT Opto-electronics Laboratories 3-1, Kanagawa Pref., 243-01, Atsugi-shi, Morinosato Wakamiya

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 03期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19940137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low threshold current density of approximately 100 A/cm2 has been obtained at 1.55 mum using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well.

引用

页码：243 / 244

页数：2