ION-IRRADIATION CONTROL OF PHOTOLUMINESCENCE FROM POROUS SILICON

被引：36
作者：
BARBOUR, JC
DIMOS, D
GUILINGER, TR
KELLY, MJ
TSAO, SS
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期
关键词：
D O I：
10.1063/1.106141
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ion irradiation was used to pattern a region of red-light emitting porous silicon by eliminating visible-light photoluminescence (PL). The PL peak wavelength is approximately 735 nm and shows little dependence on the excitation-light wavelength. The ratio of PL intensities for different excitation wavelengths was shown to be proportional to the ratio of the absorption coefficients. Below saturation, the integrated PL intensity increased linearly with excitation-light power density.
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页码：2088 / 2090
页数：3
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