PROPERTIES OF MNOS STRUCTURES

被引：45

作者：

LUNDSTRO.KI

SVENSSON, CM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 06期

关键词：

D O I：

10.1109/T-ED.1972.17500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：826 / &

共 18 条

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[6] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

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[7]

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[8]

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[9]

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[10]

NAKANUMAN S, 1970, IEEE J SOLID STATE C, VSC 5, P203

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