HIGH-POWER SWITCHING WITH PICOSECOND PRECISION

被引:98
作者
MOUROU, G
KNOX, W
机构
[1] Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14623
关键词
D O I
10.1063/1.91207
中图分类号
O59 [应用物理学];
学科分类号
摘要
Up to 10 kV have been switched with Si and GaAs laser-activated switches. We show that in spite of the thermal instability shortcoming experienced in Si, quasi-dc bias operation can be utilized in a manner which relaxes stringent synchronization requirements. In the case of GaAs the thermal instability is less severe and up to 8 kV dc has been held off and efficiently switched. In both cases, a fast switching time of ∼40 ps is observed. This time is a combination of the laser pulse width, geometry bandwidth, and jitter time. Efficient switching action requires only a few tens of microjoules of laser energy. Electrical pulses ranging from subnanosecond to hundreds of nanoseconds duration have been readily generated.
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页码:492 / 495
页数:4
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