DOUBLY RESONANT RAMAN-SCATTERING INDUCED BY AN ELECTRIC-FIELD

被引：45

作者：

AGULLORUEDA, F ^{[1
]}

MENDEZ, EE ^{[1
]}

HONG, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.38.12720

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12720 / 12723

页数：4

共 8 条

[1] VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].

BASTARD, G ;

MENDEZ, EE ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW B, 1983, 28 (06) :3241-3245

[2] ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].

BLEUSE, J ;

BASTARD, G ;

VOISIN, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223

[3] STRESS-INDUCED DOUBLY RESONANT RAMAN-SCATTERING IN GAAS [J].

CERDEIRA, F ;

ANASTASSAKIS, E ;

KAUSCHKE, W ;

CARDONA, M .

PHYSICAL REVIEW LETTERS, 1986, 57 (25) :3209-3212

[4]

CLARK RJH, 1985, ADV INFRARED RAMAN S, V12, P179

[5] DOUBLY RESONANT LO-PHONON RAMAN-SCATTERING OBSERVED WITH GAAS-ALXGA1-XAS QUANTUM-WELLS [J].

KLEINMAN, DA ;

MILLER, RC ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1987, 35 (02) :664-674

[6] OBSERVATION OF PHONON MODES THROUGH RESONANT MIXING WITH ELECTRONIC STATES IN THE SECONDARY-EMISSION SPECTRA OF A GAAS/AL0.32GA0.68AS SINGLE QUANTUM-WELL [J].

MADHUKAR, A ;

LAO, PD ;

TANG, WC ;

AIDAN, M ;

VOILLOT, F .

PHYSICAL REVIEW LETTERS, 1987, 59 (12) :1313-1316

[7]

Martin R.M., 1975, LIGHT SCATTERING SOL, V8, P80

[8] STARK LOCALIZATION IN GAAS-GAALAS SUPERLATTICES UNDER AN ELECTRIC-FIELD [J].

MENDEZ, EE ;

AGULLORUEDA, F ;

HONG, JM .

PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2426-2429

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