STIMULATED-EMISSION IN IN0.5(ALXGA1-X)0.5P QUANTUM WELL HETEROSTRUCTURES

被引：14

作者：

KUO, CP

FLETCHER, RM

OSENTOWSKI, TD

CRAFORD, MG

NAM, DW

HOLONYAK, N

HSIEH, KC

FOUQUET, JE

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,ELECT ENGN RES LAB,URBANA,IL 61801

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Lasers; Semiconductor - Microscopic Examination--Transmission Electron Microscopy - Semiconducting Gallium Arsenide;

D O I：

10.1016/0022-0248(88)90558-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For shorter wavelength lasers (λ1-yGayP lattice matched to GaAs (y approx. 0.5) and its variant, the case of Al-Ga substitution, In0.5(AlxGa1-x)0.5P. We report the growth of quantum well heterostructures (QWHs) in this system by metalorganic vapor phase epitaxy and the photopumped (77 K) laser operation of InAlGaP QWHs at wavelengths ranging from the orange to the green portions of the spectrum. Continuous wave (CW) photopumped laser operation at 77 K is achieved in the range from approx. 570.0 to approx. 550.0 nm (2.175 to 2.254 ev), and pulsed operation to wavelengths as short as 543.0 nm (2.283 ev). This paper will describe the epitaxial layers grown, the characterization of these layers using a variety of techniques, including TEM, and the laser operation experiments and results.

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页码：389 / 395

页数：7

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