ION-IMPLANTED SI MESFET RING OSCILLATORS

被引：3

|

作者：

GRUHLE, A

FERNHOLZ, G

BENEKING, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.23009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：872 / 876

页数：5

相关论文

共 50 条

[1] DEVICE MODEL FOR AN ION-IMPLANTED MESFET
TAYLOR, GW
DARLEY, HM
FRYE, RC
CHATTERJEE, PK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) : 172 - 182
[2] ON THE SCALING OF AN ION-IMPLANTED SILICON MESFET
CHATTOPADHYAY, SN
PAL, BB
SOLID-STATE ELECTRONICS, 1989, 32 (02) : 119 - 123
[3] ACCURATE MODELING OF AN ION-IMPLANTED MESFET
CHATTOPADHYAY, SN
SINGH, VK
PAL, BB
SOLID-STATE ELECTRONICS, 1987, 30 (04) : 391 - 396
[4] BACKGATING IN ION-IMPLANTED GAAS-MESFET
TANG, WC
LOWE, KS
ABDELMOTALEB, I
YOUNG, L
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2794 - 2795
[5] CHARACTERIZATION OF ION-IMPLANTED IMPATT OSCILLATORS
YING, RS
MANKARIO.RG
ENGLISH, DL
BOWER, RW
COERVER, LE
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (03) : 225 - &
[6] Numerical simulation for estimating the optically controlled characteristics of an ion-implanted Si-MESFET
Chakrabarti, P
Madheswaran, M
Gupta, A
Khan, NA
Rajamani, V
IETE JOURNAL OF RESEARCH, 2000, 46 (04) : 205 - 214
[7] THRESHOLD VOLTAGE OF ION-IMPLANTED GAAS-MESFET
MIZUTANI, T
ISHIDA, S
HONDA, T
KAWASAKI, Y
ELECTRONICS LETTERS, 1982, 18 (02) : 53 - 54
[8] OPTICALLY CONTROLLED CHARACTERISTICS IN AN ION-IMPLANTED SILICON MESFET
SINGH, VK
CHATTOPADHYAY, SN
PAL, BB
SOLID-STATE ELECTRONICS, 1986, 29 (07) : 707 - 711
[9] CHARACTERIZATION OF ION-IMPLANTED AVALANCHE DIODE OSCILLATORS
YING, RS
MANKARIO.RG
ENGLISH, DL
BOWER, RW
COERVER, LE
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (01) : 42 - &
[10] FREQUENCY-DEPENDENT CHARACTERISTICS IN AN ION-IMPLANTED PHOTO MESFET
SINGH, VK
PAL, BB
SOLID-STATE ELECTRONICS, 1987, 30 (01) : 113 - 118

← 1 2 3 4 5 →