A TRENCH-GATE SILICON-ON-INSULATOR LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH THE P(+) CATHODE WELL

被引：13

作者：

LEE, BH ^{[1
]}

YUN, CM ^{[1
]}

BYEON, DS ^{[1
]}

HAN, MK ^{[1
]}

CHOI, YI ^{[1
]}

机构：

[1] AJOU UNIV,DEPT ELECTR ENGN,SUWON 442749,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

TRENCH GATE SOI LIGBT; P(+) CATHODE WELL; LATCH-UP CURRENT; FORWARD VOLTAGE DROP;

D O I：

10.1143/JJAP.34.854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A trench-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with the p(+) cathode well is proposed to improve the latch-up characteristics, and the improved characteristics are verified numerically by MEDICI simulation. It is found that the trench-gate SOI LIGBT exhibits at least 6 times larger latch-up capability than the conventional devices. The enhanced latch-up capability of the trench-gate SOI LIGBT is obtained due to the fact that the hole current in the device bypasses the resistance of the p body region which is the source of the latch-up and reaches the cathode via the p(+) cathode well.

引用

页码：854 / 859

页数：6