SIMPLE TREATMENT OF ANOMALOUS INTERBAND DIELECTRIC-CONSTANT OF ZERO-GAP SEMICONDUCTORS

被引：4

作者：

BAILYN, M ^{[1
]}

LIU, L ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT PHYS,EVANSTON,IL 60201

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.10.759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：759 / 766

页数：8

共 14 条

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[2]

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[3]

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[5]

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[7] DIELECTRIC CONSTANT AND MOBILITY OF A DOPED ZERO-GAP SEMICONDUCTOR [J].

LIU, L ;

TOSATTI, E .

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[8] STRESS-DEPENDENT DIELECTRIC-CONSTANT OF A ZERO-GAP SEMICONDUCTOR [J].

LIU, L .

PHYSICAL REVIEW LETTERS, 1973, 30 (21) :1044-1045

[9] STATIC DIELECTRIC FUNCTION OF A ZERO-GAP SEMICONDUCTOR [J].

LIU, L ;

BRUST, D .

PHYSICAL REVIEW LETTERS, 1968, 20 (13) :651-+

[10] DIELECTRIC ENHANCEMENT AND MOBILITY OF ALPHA SN [J].

LIU, L ;

TOSATTI, E .

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