INSITU QUALITY MONITORING DURING THE DEPOSITION OF A-SI-H FILMS

被引：3
|
作者：
HAFFER, C
KUNST, M
SWIATKOWSKI, C
SEIDELMANN, G
机构：
[1] Hahn Meitner Institut Berlin GmbH, D-1000 Berlin 39
来源：
APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(93)90094-R
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A qualitative correlation between time resolved microwave conductivity (TRMC) and the quality of a-Si:H films is discussed. Aim of this work is to find a more quantitative correlation between TRMC signal features and proposed kinetic mechanisms in a-Si:H. Initial results concerning electron-hole recombination reactions are presented and discussed.
引用
收藏
页码：222 / 226
页数：5
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