ANISOTROPIC BENDING DURING EPITAXIAL-GROWTH OF MIXED-CRYSTALS ON GAAS SUBSTRATE

被引：25

作者：

NAGAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 10期

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D O I：

10.1063/1.1660904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4254 / &

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共 4 条

[1] PREPARATION OF EPITAXIAL GAXIN1-XAS [J].

CONRAD, RW ;

HOYT, PL ;

MARTIN, DD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :164-&

[2] THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS [J].

HOCKINGS, EF ;

KUDMAN, I ;

SEIDEL, TE ;

SCHMELZ, CM ;

STEIGMEIER, EF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2879-+

[3] DETERMINATION OF MOLE FRACTION OF GAP IN GAASP SINGLE CRYSTAL BY A NEW X-RAY DIFFRACTION TECHNIQUE [J].

KISHINO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) :1113-&

[4] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&