METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF CDTE ON GAAS IN A VERTICAL REACTOR WITH MULTINOZZLES

The metalorganic chemical vapor deposition (MOCVD) growth of CdTe films on 3 inch diameter (100) GaAs substrates using a vertical, rotating-susceptor reactor with linearly aligned multi-nozzles was studied. Specular single (111BAR)B CdTe films over the entire 3 inch wafer were obtained by adjusting the VI/II ratio individually for each nozzle. The thickness variation for a 2.5-mu-m thick CdTe films was below 8%. The full-width at half-maximum (FWHM) of the (333) double-crystal X-ray rocking curve (DCRC) was about 250 arc sec. To evaluate its suitability as a substrate for HgCdTe epilayers, a Hg0.7Cd0.3Te layer 3-mu-m thick was grown on the CdTe/GaAs using the same MOCVD system. The HgCdTe layer also showed a specular surface. No macroscopic crystal defects such as cellular structures or antiphase domains were observed on the etched HgCdTe surface.