EFFECTS OF HOT-ELECTRONS ON THE RESPONSE OF N-TYPE EXTRINSIC SILICON IR DETECTORS

被引：0

作者：

STAPELBROEK, M ^{[1
]}

PETROFF, MD ^{[1
]}

机构：

[1] ROCKWELL INT,THOUSAND OAKS,CA 91360

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：313 / 313

页数：1

共 50 条

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