EFFECTS OF HOT-ELECTRONS ON THE RESPONSE OF N-TYPE EXTRINSIC SILICON IR DETECTORS

被引：0

作者：

STAPELBROEK, M ^{[1
]}

PETROFF, MD ^{[1
]}

机构：

[1] ROCKWELL INT,THOUSAND OAKS,CA 91360

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：313 / 313

页数：1

共 50 条

[21] TEMPERATURE DEPENDENCE OF ANISOTROPIC DRIFT VELOCITY OF HOT-ELECTRONS IN N-TYPE GE
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[22] DEPENDENCE OF THE MICROWAVE NOISE OF HOT-ELECTRONS ON THE TEMPERATURE OF AN N-TYPE GAAS CRYSTAL
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[23] EVIDENCE OF INTERVALLEY SCATTERING OF ELECTRONS IN EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE SILICON
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[24] TUNABLE FAR-INFRARED RADIATIONS FROM HOT-ELECTRONS IN N-TYPE INSB
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[25] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE GERMANIUM
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[26] AVERAGE ENERGY OF HOT-ELECTRONS IN N-TYPE INSB SUBJECTED TO TRANSVERSE MAGNETIC-FIELDS
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[27] MONTE-CARLO CALCULATIONS OF DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN N-TYPE GAAS
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[28] INFRARED BIREFRINGENCE ON HOT-ELECTRONS IN N TYPE GE
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[29] MICROWAVE CONDUCTIVITY AND INTERVALLEY TRANSFER OF HOT ELECTRONS IN N-TYPE SILICON
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[30] N-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF LAYER INHOMOGENEOUS SEMICONDUCTORS CONTAINING HOT-ELECTRONS
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