EFFECTS OF HOT-ELECTRONS ON THE RESPONSE OF N-TYPE EXTRINSIC SILICON IR DETECTORS

被引：0

作者：

STAPELBROEK, M ^{[1
]}

PETROFF, MD ^{[1
]}

机构：

[1] ROCKWELL INT,THOUSAND OAKS,CA 91360

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：313 / 313

页数：1

共 50 条

[1] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB
BAREIKIS, V
GALDIKAS, A
MILIUSYTE, R
POZHELA, J
VIKTORAVICIUS, V
JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220
[2] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE SILICON
HEINRICH, H
KRIECHBAUM, M
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (05) : 927 - +
[3] NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB
BAREIKIS, V
VIKTORAVICHYUS, V
GALDIKAS, A
MILYUSHITE, R
POZHELA, Y
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1165 - 1167
[4] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS
RAGUOTIS, R
REKLAITIS, A
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 906 - 908
[5] MOBILITY AND TEMPERATURE OF HOT-ELECTRONS IN N-TYPE INDIUM ARSENIDE
KOMISSAROV, VS
ALEKSANDROV, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1423 - 1424
[6] ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS
KANEDA, S
ABE, M
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (12): : 112 - &
[7] DETERMINATION OF THE HALL FACTOR OF HOT-ELECTRONS IN N-TYPE GAAS
BOCHKAREV, S
KACHYULIS, S
PARSHYALYUNAS, I
TAMULAITIS, G
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 818 - 819
[8] MILLIMETER-WAVE FREQUENCY-RESPONSE OF HOT-ELECTRONS IN N-TYPE GAAS
ABE, M
KANEDA, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (11) : 1675 - +
[9] DRIFT VELOCITY AND AVERAGE ENERGY OF HOT-ELECTRONS IN N-TYPE INSB
VOROBEV, LE
GNESIN, MM
STAFEEV, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1322 - 1324
[10] INFLUENCE OF NONPARABOLICITY ON HOT-ELECTRONS IN N-TYPE GALLIUM-ARSENIDE
WU, CC
LIN, CJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B367 - B368

← 1 2 3 4 5 →