CONTROL OF MINORITY-CARRIER LIFETIME BY GOLD IMPLANTATION IN SEMICONDUCTOR-DEVICES

被引：9

作者：

COFFA, S ^{[1
]}

CALCAGNO, L ^{[1
]}

CAMPISANO, SU ^{[1
]}

CALLERI, G ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] SGS MICROELETTR,CATANIA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

Semiconducting Silicon--Charge Carriers - Semiconductor Device Manufacture - Semiconductor Materials--Electric Properties;

D O I：

10.1149/1.2097180

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon wafer and devices have been implanted with gold ions and thermally processed in the 1073-1243 K temperature range. Resistivity profiles, leakage currents in p-n junctions, and recombination lifetime have been measured as a function of the Au-implanted dose, annealing temperature, and time. The use of ion implantation for the predeposition of the Au atoms allows a good control of the lifetime in a rather wide range of values. In addition, it is shown that it is very easy to generate flat gold profiles across the silicon wafers.

引用

页码：2073 / 2075

页数：3

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