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EVIDENCE FOR IMPACT-IONIZED ELECTRON INJECTION IN SUBSTRATE OF N-CHANNEL MOS STRUCTURES
被引:20
作者
:
MATSUNAGA, J
论文数:
0
引用数:
0
h-index:
0
MATSUNAGA, J
KOHYAMA, S
论文数:
0
引用数:
0
h-index:
0
KOHYAMA, S
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1978年
/ 33卷
/ 04期
关键词
:
D O I
:
10.1063/1.90361
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:335 / 337
页数:3
相关论文
共 9 条
[1]
ABBAS SA, 1974, IEDM TECH DIG, P404
[2]
SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET
KAMATA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KAMATA, T
TANABASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
TANABASHI, K
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KOBAYASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(06)
: 1127
-
1133
[3]
STEADY-STATE MATHEMATICAL THEORY FOR INSULATED GATE FIELD-EFFECT TRANSISTOR
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
MURLEY, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(01)
: 1
-
12
[4]
IMPACT IONIZATION CURRENT IN MOS DEVICES
LATTIN, WW
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
LATTIN, WW
RUTLEDGE, JL
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
RUTLEDGE, JL
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(09)
: 1043
-
1046
[5]
CARRIER MULTIPLICATION IN PINCHOFF REGION OF MOS TRANSISTORS
MARTINOT, H
论文数:
0
引用数:
0
h-index:
0
MARTINOT, H
ROSSEL, P
论文数:
0
引用数:
0
h-index:
0
ROSSEL, P
[J].
ELECTRONICS LETTERS,
1971,
7
(5-6)
: 118
-
&
[6]
THERMAL CARRIER GENERATION IN CHARGE-COUPLED-DEVICES
ONG, DG
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV, SCH ELECT ENGN, W LAFAYETTE, IN 47907 USA
ONG, DG
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV, SCH ELECT ENGN, W LAFAYETTE, IN 47907 USA
PIERRET, RF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(08)
: 593
-
602
[7]
INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
GULDBERG, J
论文数:
0
引用数:
0
h-index:
0
GULDBERG, J
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(12)
: 1285
-
+
[8]
WOLF HF, 1969, SILICON SEMICONDUCTO, P76
[9]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
←
1
→
共 9 条
[1]
ABBAS SA, 1974, IEDM TECH DIG, P404
[2]
SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET
KAMATA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KAMATA, T
TANABASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
TANABASHI, K
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN
KOBAYASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(06)
: 1127
-
1133
[3]
STEADY-STATE MATHEMATICAL THEORY FOR INSULATED GATE FIELD-EFFECT TRANSISTOR
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
MURLEY, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(01)
: 1
-
12
[4]
IMPACT IONIZATION CURRENT IN MOS DEVICES
LATTIN, WW
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
LATTIN, WW
RUTLEDGE, JL
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008
RUTLEDGE, JL
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(09)
: 1043
-
1046
[5]
CARRIER MULTIPLICATION IN PINCHOFF REGION OF MOS TRANSISTORS
MARTINOT, H
论文数:
0
引用数:
0
h-index:
0
MARTINOT, H
ROSSEL, P
论文数:
0
引用数:
0
h-index:
0
ROSSEL, P
[J].
ELECTRONICS LETTERS,
1971,
7
(5-6)
: 118
-
&
[6]
THERMAL CARRIER GENERATION IN CHARGE-COUPLED-DEVICES
ONG, DG
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV, SCH ELECT ENGN, W LAFAYETTE, IN 47907 USA
ONG, DG
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV, SCH ELECT ENGN, W LAFAYETTE, IN 47907 USA
PIERRET, RF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(08)
: 593
-
602
[7]
INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
GULDBERG, J
论文数:
0
引用数:
0
h-index:
0
GULDBERG, J
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(12)
: 1285
-
+
[8]
WOLF HF, 1969, SILICON SEMICONDUCTO, P76
[9]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
←
1
→