The electrical instabilities during ultra-fast S-N switching in high-T-c thin film microstrip

被引：4

作者：

Balevicius, S. ^{[1
]}

Anisimovas, F. ^{[1
]}

Balciunas, V. ^{[1
]}

Butkute, R. ^{[1
]}

Vengalis, B. ^{[1
]}

Flodstrom, A. S. ^{[2
]}

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Royal Inst Technol, S-10044 Stockholm, Sweden

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1994年 / 235-40卷

关键词：

D O I：

10.1016/0921-4534(94)91215-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Voltage(V) - Current(I) characteristics and time response measurements were carried out on laser deposited thin film Y-Ba-Cu-O microstrips, using 3-80 ns duration pulses. Two types of electrical instabilities appearing at currents significantly higher then critical (I-c) were investigated. It was shown that first of them, which takes place during several tens of nanoseconds, is the result of heating induced by flux flow and is fully reversible process. The second-manifesting at more higher currents causes during subnanosecond time the upset of the microstrip. The behaviour of the instabilitiesis explained in terms of a bundle-like motion of magnetic vortices.

引用

页码：3377 / 3378

页数：2

共 4 条

[1] FLUX-FLOW DURING HIGH-POWER NANOSECOND S-N SWITCHING IN THIN HIGH-T-C FILMS
BALEVICIUS, S
BICIUNAS, A
BUTKUTE, R
LISAUSKAS, V
VENGALIS, B
BRAZDEIKIS, A
FLODSTROM, A
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (06) : 3589 - 3591
[2] BALEVICIUS S, 1992, MATER RES SOC SYMP P, V275, P589, DOI 10.1557/PROC-275-589
[3] TRANSMISSION-LINE PROTECTION WITH THIN-FILM CHALCOGENIDE GLASS DEVICES
CALLAROTTI, RC
SCHMIDT, PE
[J]. THIN SOLID FILMS, 1982, 90 (04) : 379 - 384
[4] Kozirev A.B., 1993, SUPERCON PHYS CHEM T, V6, P823

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