ASYMMETRY OF DISLOCATION MOBILITY IN SEMICONDUCTORS

被引：0

作者：

NIKITENKO, VI

FARBER, BY

YAKIMOV, EB

机构：

来源：

JETP LETTERS | 1981年 / 34卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：233 / 236

页数：4

共 50 条

[1] THEORIES OF DISLOCATION MOBILITY IN SEMICONDUCTORS
JONES, R
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 61 - 67
[2] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS
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THOMSON, R
KABLER, M
NINOMIYA, T
PHYSICAL REVIEW, 1963, 131 (01): : 58 - &
[3] The energetics of dislocation cores in semiconductors and their role on dislocation mobility
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Antonelli, A
Fazzio, A
PHYSICA B-CONDENSED MATTER, 2001, 302 : 398 - 402
[4] A THEORY OF THE DISLOCATION MOBILITY IN DOPED SEMICONDUCTORS
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DARINSKII, BM
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FIZIKA TVERDOGO TELA, 1982, 24 (02): : 511 - 516
[5] THRESHOLD OF DISLOCATION MOBILITY IN ADMIXED SEMICONDUCTORS
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ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (10): : 64 - 68
[6] DISLOCATION MOBILITY IN PURE SEMICONDUCTORS UNDER ILLUMINATION
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[7] EXCITATION EFFECT OF DISLOCATION MOBILITY IN ELEMENTARY SEMICONDUCTORS
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KIMURA, K
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IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (04): : 729 - 734
[8] EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS
VANDERSCHAEVE, G
LEVADE, C
FARESS, A
COUDERC, JJ
CAILLARD, D
JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 305 - 315
[9] Dislocation level as inferred from recombination enhanced dislocation mobility in semiconductors
1600, Publ by Elsevier Science Publishers B.V., Amsterdam, Neth
[10] EFFECT OF SURFACE-CHARGE ON THE DISLOCATION MOBILITY IN SEMICONDUCTORS
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INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 315 - 319

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