RADIATION-INDUCED DEFECTS AND THEIR ANNEALING BEHAVIOR IN CADMIUM TELLURIDE

被引：19
|
作者：
TAGUCHI, T [1 ]
INUISHI, Y [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期
关键词：
D O I：
10.1063/1.328307
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4757 / 4769
页数：13
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