DAMAGE TO THE SILICON LATTICE BY REACTIVE ION ETCHING

被引：20

作者：

STRUNK, HP

CERVA, H

MOHR, EG

机构：

[1] Siemens AG, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 11期

关键词：

D O I：

10.1149/1.2095452

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2876 / 2880

页数：5

共 20 条

[1]

BERGHOLZ W, 1985, I PHYS C SER, V76, P11

[2]

BOURRET A, 1986, MATER RES SOC S P, V59, P223

[3] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF LATTICE DAMAGE AND POLYMER COATING FORMED AFTER REACTIVE ION ETCHING OF SIO2 [J].

CERVA, H ;

MOHR, EG ;

OPPOLZER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :590-593

[4] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J].

COYLE, GJ ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :604-606

[5]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[6] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J].

FRIESER, RG ;

MONTILLO, FJ ;

ZINGERMAN, NB ;

CHU, WK ;

MADER, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) :2237-2241

[7] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J].

OEHRLEIN, GS ;

TROMP, RM ;

TSANG, JC ;

LEE, YH ;

PETRILLO, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1441-1447

[8]

OEHRLEIN GS, 1986, J VAC SCI TECHNOL A, V4, P750, DOI 10.1116/1.573802

[9] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J].

OEHRLEIN, GS ;

TROMP, RM ;

LEE, YH ;

PETRILLO, EJ .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :420-422

[10] ANALYSIS OF ROD-LIKE DEFECTS IN SILICON AND GERMANIUM BY MEANS OF HIGH-RESOLUTION ELECTRON-MICROSCOPY [J].

PASEMANN, M ;

HOEHL, D ;

ASEEV, AL ;

PCHELYAKOV, OP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01) :135-139

← 1 2 →