FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI

被引：15
作者：
ASANO, T
ISHIWARA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.7567/JJAPS.21S1.187
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：187 / 191
页数：5
相关论文
共 9 条
[1]   SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
POATE, JM .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646
[2]   CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].
GEIS, MW ;
FLANDERS, DC ;
SMITH, HI .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74
[3]   CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].
GIBBONS, JF ;
LEE, KF ;
MAGEE, TJ ;
PENG, J ;
ORMOND, R .
APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833
[4]  
GIBBONS JF, 1981, LASER ELECTRON BEAM, P449
[5]  
IHARA T, 1981 IEEE INT SOL ST
[6]   FORMATION OF A DOUBLE-HETERO SI-COSI2-SI STRUCTURE USING MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES [J].
SAITOH, S ;
ISHIWARA, H ;
FURUKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :49-54
[7]   DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J].
SAITOH, S ;
ISHIWARA, H ;
FURUKAWA, S .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :203-205
[8]   LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J].
SAKURAI, J ;
KAWAMURA, S ;
MORI, H ;
NAKANO, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L176-L178
[9]   ORIENTED CRYSTAL-GROWTH OF SI ON SIO2 PATTERNS BY PULSE RUBY-LASER ANNEALING [J].
TAMURA, M ;
TAMURA, H ;
MIYAO, M ;
TOKUYAMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :43-48
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