THE VOLTAGE BREAKDOWN OF GAAS ABRUPT JUNCTIONS

被引:24
作者
WEINSTEIN, M
MLAVSKY, AI
机构
关键词
D O I
10.1063/1.1753796
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:97 / 99
页数:3
相关论文
共 7 条
[1]  
KRESSEL H, 1962, P IRE, V50, P2493
[2]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[3]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241
[4]   IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].
MILLER, SL .
PHYSICAL REVIEW, 1957, 105 (04) :1246-1249
[5]   SIGNIFICANCE OF CRYSTALLOGRAPHIC POLARITY IN FABRICATION OF JUNCTIONS IN INSB [J].
MINAMOTO, MT .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1826-&
[6]  
MLAVSKY AI, 1962, J ELECTROCHEM SOC, V109, pC202
[7]  
MLAVSKY AI, 1961, J ELECTROCHEM SOC, V108, pC263