THE ROLE OF TRANSIENT DAMAGE ANNEALING IN SHALLOW JUNCTION FORMATION

被引：15

作者：

FAIR, RB ^{[1
]}

机构：

[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27706

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90206-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：371 / 378

页数：8

共 28 条

[21]

OZTURK MC, UNPUB

[22]

SEDGWICK TO, 1985, OCT S RED TEMP PROC

[23]

SEIDEL T, 1971, RADIAT EFF, V73, P1

[24]

SEIDEL TE, 1985, NUCL INSTRUM METH B, V7, P215

[25] SOME ASPECTS OF DAMAGE ANNEALING IN ION-IMPLANTED SILICON - DISCUSSION IN TERMS OF DOPANT ANOMALOUS DIFFUSION [J].

SERVIDORI, M ;

SOUREK, Z ;

SOLMI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1723-1728

[26] RETARDED AND ENHANCED DOPANT DIFFUSION IN SILICON RELATED TO IMPLANTATION-INDUCED EXCESS VACANCIES AND INTERSTITIALS [J].

SERVIDORI, M ;

ANGELUCCI, R ;

CEMBALI, F ;

NEGRINI, P ;

SOLMI, S ;

ZAUMSEIL, P ;

WINTER, U .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1834-1840

[27] INFLUENCE OF IMPLANT INDUCED VACANCIES AND INTERSTITIALS ON BORON-DIFFUSION IN SILICON [J].

SOLMI, S ;

ANGELUCCI, R ;

CEMBALI, F ;

SERVIDORI, M ;

ANDERLE, M .

APPLIED PHYSICS LETTERS, 1987, 51 (05) :331-333

[28] POINT-DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON .1. CONCENTRATIONS ABOVE SOLID SOLUBILITY [J].

TSAI, JCC ;

SCHIMMEL, DG ;

FAIR, RB ;

MASZARA, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1508-1518

← 1 2 3 →